Analogue Electronics 1
60 Hours
One Semester or equivalent
Hawthorn
Available to incoming Study Abroad and Exchange students
Overview
This unit of study aims to provide you with an in-depth understanding of the operation and application of solid state devices, including diodes, bipolar junction transistors and field-effect transistors.
Requisites
Teaching periods
Location
Start and end dates
Last self-enrolment date
Census date
Last withdraw without fail date
Results released date
Learning outcomes
Students who successfully complete this unit will be able to:
- Appreciate and discern the physical behaviour of solid state devices (K1, K3, S1, S2, S3)
- Design and analyse circuits based on solid state devices (K2, K3, S1, S2, S3)
- Apply simulation tools to the analysis and design of circuits based on solid state devices (K2, K3, S1, S2, S3)
Teaching methods
Hawthorn
| Type | Hours per week | Number of weeks | Total (number of hours) |
|---|---|---|---|
| Face to Face Contact (Phasing out) Lecture | 3.00 | 12 weeks | 36 |
| Face to Face Contact (Phasing out) Tutorial | 1.00 | 12 weeks | 12 |
| Face to Face Contact (Phasing out) Laboratory | 1.00 | 12 weeks | 12 |
| Unspecified Learning Activities (Phasing out) Independent Learning | 7.50 | 12 weeks | 90 |
| TOTAL | 150 |
Assessment
| Type | Task | Weighting | ULO's |
|---|---|---|---|
| Assessment | Individual/Group | 25 - 35% | 2,3 |
| Examination | Individual | 45 - 60% | 1,2 |
| Test | Individual | 5 - 15% | 2 |
Hurdle
As the minimum requirements of assessment to pass a unit and meet all ULOs to a minimum standard, an undergraduate student must have achieved:
(i) an aggregate mark of 50% or more, and(ii) at least 40% in the final exam.Students who do not successfully achieve hurdle requirement (ii) will receive a maximum of 45% as the total mark for the unit.
Content
- Principles of semiconductor devices
- Diodes and diode circuits – i-v characteristics, models, rectifier circuits, clampers, limiters, etc.
- Bipolar junction transistors (BJTs) – device structure and physical operation, dc and ac models, and biasing
- Basic configurations of single-BJT amplifier circuits
- Multi-stage amplifier circuits – input and output loading effects
- Field effect transistors (FETs) – device structure and physical operation, dc and ac models, and biasing
- Basic configurations of single-FET amplifier circuits
- Frequency response of transistor-based amplifiers
- Computer-aided analysis of analogue circuits
Study resources
Reading materials
A list of reading materials and/or required textbooks will be available in the Unit Outline on Canvas.